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| PD - 95647 IRG4PC50KPBF INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT VCES = 600V Features High short circuit rating optimized for motor control, tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations Lead-Free C G E VCE(on) typ. = 1.84V @VGE = 15V, IC = 30A n-channel Benefits As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT Latest generation 4 IGBTs offer highest power density motor controls possible This part replaces the IRGPC50K and IRGPC50M devices Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. TO-247AC Max. 600 52 30 104 104 10 20 170 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. 0.24 6 (0.21) Max. 0.64 40 Units C/W g (oz) www.irf.com 7/26/04 1 IRG4PC50KPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 Emitter-to-Collector Breakdown Voltage 18 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.47 1.84 Collector-to-Emitter Saturation Voltage 2.19 VCE(ON) 1.79 VGE(th) Gate Threshold Voltage 3.0 VGE(th)/TJ Temperature Coeff. of Threshold Voltage -12 gfe Forward Transconductance 17 24 ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS Max. Units Conditions V VGE = 0V, IC = 250A V VGE = 0V, IC = 1.0A V/C VGE = 0V, IC = 1.0mA 2.2 IC = 30A VGE = 15V IC = 52A See Fig.2, 5 V IC = 30A , TJ = 150C 6.0 VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 250A S VCE = 100 V, IC = 30A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 5000 VGE = 0V, VCE = 600V, TJ = 150C 100 n A VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 10 Typ. 200 25 85 38 34 160 79 0.49 0.68 1.12 37 35 260 170 2.34 13 3200 370 95 Max. Units Conditions 300 IC = 30A 38 nC VCC = 400V See Fig.8 130 VGE = 15V TJ = 25C ns 240 IC = 30A, VCC = 480V 120 VGE = 15V, RG = 5.0 Energy losses include "tail" mJ See Fig. 9,10,14 1.4 s VCC = 400V, TJ = 125C VGE = 15V, RG = 10 , VCPK < 500V TJ = 150C, IC = 30A, VCC = 480V ns VGE = 15V, RG = 5.0 Energy losses include "tail" mJ See Fig. 11,14 nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0 Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. 2 www.irf.com IRG4PC50KPBF 70 For both: 60 Triangular wave: 50 Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 40W Clamp voltage: 80% of rated 40 Square wave: 60% of rated voltage I 30 20 10 Ideal diodes 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) 100 TJ = 25 C TJ = 150 C I C , Collector-to-Emitter Current (A) 100 TJ = 150 C 10 10 TJ = 25 C V CC = 50V 5s PULSE WIDTH 5 6 7 8 9 10 11 12 1 V GE = 15V 20s PULSE WIDTH 1 10 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PC50KPBF 60 3.0 50 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 60 A Maximum DC Collector Current(A) 40 30 2.0 IC = 30 A 20 IC = 15 A 10 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50KPBF 5000 4000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 30A 16 C, Capacitance (pF) Cies 3000 12 2000 8 1000 4 0 1 10 Coes Cres 100 0 0 40 80 120 160 200 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 4.0 Total Switching Losses (mJ) 3.0 Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C I C = 30A 100 RG = 5.0 Ohm VGE = 15V VCC = 480V 10 IC = 60 A IC = 30 A 2.0 1 IC = 15 A 1.0 0.0 0 RG , Gate Resistance (Ohm) () 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PC50KPBF 8.0 6.0 I C, Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC VGE 5.0 = 5.0Ohm = 150 C = 480V = 15V 1000 VGE = 20V T J = 125 oC 4.0 100 2.0 SAFE OPERATING AREA 0.0 10 20 30 40 50 60 10 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC50KPBF L 50V 1000V VC * D.U.T. RL = 0 - 480V 480V 4 X IC@25C c 480F 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V D.U.T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V A 1000V d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5s E off www.irf.com 7 IRG4PC50KPBF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WIT H ASS EMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INT ERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE IRFPE30 56 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 8 www.irf.com |
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